| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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328,727 pcs
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328727 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,470 pcs
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2470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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123 pcs
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123 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI5513CDC-T1-E3 is a versatile N- and P-channel MOSFET designed for applications requiring efficient switching. It offers a 20V drain-source breakdown voltage and a low on-resistance of 55mOhm at a drain current of 4.3A and gate-source voltage of 4.5V.
This MOSFET features a logic level gate and a typical gate charge of 4.2nC at 5V. The input capacitance is rated at 285pF at 10V. It can handle a continuous drain current of 4A at 25°C case temperature and dissipate up to 3.1W under the same conditions.
The device operates within a temperature range of -55°C to 150°C (TJ). It is housed in a 1206-8 ChipFET surface mount package, suitable for compact designs. The MOSFET is also halogen-free, adhering to IEC 61249-2-21 definition.
Key electrical characteristics include a gate threshold voltage of 1.5V maximum at 250µA. The TrenchFET technology ensures high performance and efficiency for load switching in portable devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The maximum gate threshold voltage is 1.5V at 250µA.
The typical gate charge is 4.2nC at 5V.
The maximum input capacitance is 285pF at 10V.
The maximum on-resistance is 55mOhm at 4.3A, 4.5V.
The continuous drain current is 4A at 25°C.
The maximum power dissipation is 3.1W at 25°C.
The operating temperature range is -55°C to 150°C.
This is an N- and P-Channel MOSFET.
Yes, this MOSFET features a logic level gate.
The package type is 1206-8 ChipFET, suitable for surface mounting.
Yes, this product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
Yes, this product is Halogen-free.