| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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116 pcs
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116 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Feature | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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The Vishay Dale SI5509DC-T1-E3 is a versatile MOSFET designed for various electronic applications. It offers both N-Channel and P-Channel configurations, making it suitable for complementary designs. With a maximum drain-source voltage of 20V and a continuous drain current of up to 6.1A, this device is capable of handling moderate power loads.
The MOSFET boasts a low on-resistance of 52mOhm at 5A and 4.5V, ensuring efficient power transfer and minimizing heat generation. Its gate charge is rated at 6.6nC maximum at 5V, and the gate threshold voltage is 2V at 250µA, indicating compatibility with logic-level gate drives.
Packaged in an 8-SMD, Flat Lead (1206-8 ChipFET™) format, the SI5509DC-T1-E3 is designed for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ), providing robustness for demanding environments. The device is specified as RoHS3 Compliant, with MSL 1 and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-SMD Flat Lead, 1206-8 ChipFET™.
-55°C to 150°C (junction temperature).
52mOhm at 5A and 4.5V.
6.6nC at 5V.
N and P-Channel.