| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,514 pcs
|
1514 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Lead Style | |
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| Power Dissipation | |
| Tape & Reel |
The SI5504DC-T1 is a versatile N/P-Channel MOSFET manufactured by Vishay Siliconix. It is designed for surface mount applications and comes in a 1206-8 package.
Key electrical specifications include a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of up to 2.9A at 25°C. The on-resistance (Rds(on)) is rated at a maximum of 85mOhm at 2.9A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA.
This MOSFET has a maximum power dissipation of 1.1W and an operating temperature range from -55°C to 150°C. The TrenchFET® technology is utilized in its construction, and it supports logic-level gate operation.
Packaged in tape and reel, the SI5504DC-T1 is suitable for automated assembly processes. Its robust design and specifications make it a suitable component for various electronic circuits requiring efficient switching and power management.
The drain-source voltage (Vdss) is 30V.
The maximum continuous drain current (Id) at 25°C is 2.9A.
The on-resistance (Rds(on)) is a maximum of 85mOhm when Id is 2.9A and Vgs is 10V.
The operating temperature range is -55°C to 150°C.
It is in a 1206-8, 8-SMD, Flat Lead surface mount package.
The RoHS status is RoHS3 Compliant.