| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI5504BDC-T1-GE3 is a dual N- and P-Channel MOSFET designed for applications requiring efficient switching. It offers a maximum drain-source voltage of 30V and can handle a continuous drain current of up to 4A.
The MOSFET exhibits a low on-resistance (RdsOn) of 65mOhm at a gate-source voltage of 10V and a drain current of 3.1A. The gate charge (Qg) is specified at a maximum of 7nC at 10V.
Packaged in an 8-SMD, Flat Lead 1206-8 ChipFET™ package, this component is suitable for surface mounting. It operates across a junction temperature range of -55°C to 150°C.
Key electrical characteristics include a gate threshold voltage of 3V at 250µA and an input capacitance of 220pF at 15V. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V.
The maximum continuous drain current (Id) is 4A.
The Rds On is a maximum of 65mOhm at a drain current of 3.1A and a gate-source voltage of 10V.
The operating junction and storage temperature range is -55°C to 150°C.
It is in an 8-SMD, Flat Lead 1206-8 ChipFET™ package.