| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,623 pcs
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1623 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs(th) (Max) @ Id |
The Vishay Dale SI5504BDC-T1-E3 is a dual N- and P-Channel TrenchFET® Power MOSFET designed for DC/DC conversion and load switching in portable applications. It offers a 30V drain-source voltage and a low on-resistance of 65mOhm at 10V Vgs, with a continuous drain current rating of 4A.
This MOSFET is housed in an 8-SMD, Flat Lead 1206-8 ChipFET® package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 3.12W at 25°C case temperature.
Key electrical characteristics include a gate charge of 7nC at 10V Vgs and a gate threshold voltage of 3V at 250µA. The device is designed for logic-level gate operation, making it versatile for various circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
1206-8 ChipFET® Dual.
-55°C to 150°C.
65 mOhm maximum at 10V gate drive and 3.1A drain current.
3V maximum at 250µA drain current.
4 A.
3.12 W.