| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5481DU-T1-E3 is a P-Channel MOSFET belonging to the Metal Oxide Semiconductor Field-Effect Transistor technology family. It is designed for surface mount applications and comes in a PowerPAK® ChipFET™ Single package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous current rating of 12A (Tc). The maximum power dissipation is rated at 3.1W (Ta) and 17.8W (Tc). The on-resistance (Rds On) is a maximum of 22mOhm at 6.5A and 4.5V gate-source voltage. Input capacitance (Ciss) is 1610 pF @ 10V, and the maximum gate charge (Qg) is 50 nC @ 8V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is suitable for various electronic designs requiring a reliable P-Channel MOSFET with specific electrical and thermal characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 20V.
The continuous current rating is 12A (Tc).
The maximum power dissipation is 3.1W (Ta) and 17.8W (Tc).
The on-resistance (Rds On) is a maximum of 22mOhm at 6.5A and 4.5V.
The operating temperature range is -55°C to 150°C (TJ).
It is in a PowerPAK® ChipFET™ Single package.
The RoHS status is RoHS3 Compliant.