SI5475BDC-T1-E3 The Vishay Dale SI5475BDC-T1-E3 is a P-Channel MOSFET with a 12V drain-source voltage rating and a continuous current of 6A. It is available in a 1206-8 ChipFET™ package.
Mfr Part #:

SI5475BDC-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI5475BDC-T1-E3 is a P-Channel MOSFET with a 12V drain-source voltage rating and a continuous current of 6A. It is available in a 1206-8 ChipFET™ package.
✓ Total Stock: 1,150 pcs
$ Price Range: $0.99

SI5475BDC-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,150 pcs
1150 pcs On Request 1 On Request On Request 13+ On Request On Request

SI5475BDC-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI5475BDC-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI5475BDC-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source voltage (VDS) of 12V and a continuous drain current (ID) of up to 6A. The MOSFET exhibits a low on-resistance (Rds On) of 28mOhm at a gate-source voltage (VGS) of 4.5V, making it efficient for power switching applications.

 

This component operates within a temperature range of -55°C to 150°C. It is housed in a 1206-8 ChipFET™ package, suitable for surface mounting. The device also offers a gate charge (Qg) of 40 nC at 8V VGS and an input capacitance (Ciss) of 1400 pF at 6V VDS.

 

Key electrical characteristics include a gate-source voltage (VGS) limit of ±8V and a gate-source threshold voltage (VGS(th)) of 1V maximum at 250µA. The maximum power dissipation is rated at 2.5W (Ta) and 6.3W (Tc). The device is halogen-free according to IEC 61249-2-21 standards.

SI5475BDC-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI5475BDC-T1-E3 P-Channel 12V MOSFET
Subcategory: P-Channel

SI5475BDC-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI5475BDC-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI5475BDC-T1-E3 Features

  • P-Channel 12V MOSFET
  • 6A continuous drain current
  • 28mOhm max Rds On
  • 1206-8 ChipFET™ package
  • Surface Mountable

SI5475BDC-T1-E3 Applications

  • Suitable for high-side load switching.
  • Used in battery protection circuits.
  • Ideal for low-voltage DC-DC converters.
  • Power management in portable devices.

SI5475BDC-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for this MOSFET?

12 V (drain-source breakdown voltage minimum -12 V).

What is the package type of the SI5475BDC-T1-E3?

1206-8 ChipFET surface mount package with 8-SMD flat leads.

What is the operating temperature range?

-55 °C to 150 °C junction temperature.

What is the on-resistance at 4.5V gate drive?

28 mOhm typical at ID = -6 A and VGS = -4.5 V.

What is the gate threshold voltage?

Minimum -0.45 V, maximum -1.0 V at VDS = VGS and ID = -250 µA.

What is the maximum continuous drain current?

-6 A at case temperature 25 °C; -7.7 A at ambient 25 °C with derating.

Is the component halogen-free?

Yes, the datasheet indicates it is halogen-free.

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