| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,142 pcs
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9142 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1033 | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1136+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
This P-Channel MOSFET from Vishay Dale, part number SI5461EDC-T1-E3, is designed for various electronic applications. It operates with a drain-source voltage (Vds) of 20V and can handle a continuous drain current (Ids) of 4.5A at a case temperature (Ta) of 25°C. The on-resistance (Rds On) is specified as a maximum of 45mOhm when measured at 5A drain current and 4.5V gate-source voltage.
The device has a maximum power dissipation of 1.3W (Ta) and operates within a temperature range of -55°C to 150°C (TJ). It features a gate charge (Qg) of 20nC at 4.5V Vgs and a gate threshold voltage (Vgs(th)) of 450mV maximum at 250µA. The maximum gate-source voltage (Vgs) is ±12V.
Packaged in an 8-SMD, Flat Lead 1206-8 ChipFET™ package, this MOSFET is suitable for surface mounting. It is specified as RoHS3 Compliant and has an MSL rating of 1. The part is also Halogen-Free according to IEC 61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI5461EDC-T1-E3 is 20V.
The continuous drain current (Ids) for the SI5461EDC-T1-E3 is 4.5A at a case temperature of 25°C.
The maximum on-resistance (Rds On) for the SI5461EDC-T1-E3 is 45mOhm when measured at 5A drain current and 4.5V gate-source voltage.
The SI5461EDC-T1-E3 operates within a temperature range of -55°C to 150°C (TJ).
The SI5461EDC-T1-E3 is supplied in an 8-SMD, Flat Lead 1206-8 ChipFET™ package.
Yes, the SI5461EDC-T1-E3 is RoHS3 Compliant.