| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,364 pcs
|
1364 pcs | On Request | 1 | On Request | On Request | 0815+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI5447DC-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.5A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 76mOhm at 3.5A and 4.5V Vgs, and a gate charge (Qg) of 10nC at 4.5V Vgs. The gate threshold voltage (Vgs(th)) is a minimum of 450mV at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is packaged in an 8-SMD, Flat Lead (1206-8 ChipFET™) format and is suitable for surface mounting.
The device utilizes MOSFET (Metal Oxide) technology and has a maximum power dissipation of 1.3W (Ta). It is compliant with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
It is available in an 8-SMD, Flat Lead package, also known as 1206-8 ChipFET.
-55°C to 150°C (junction temperature).
The minimum gate threshold voltage is 450mV at 250µA drain current.
The maximum on-resistance is 76mOhm at 3.5A drain current and 4.5V gate drive.
The maximum gate charge is 10nC at 4.5V Vgs.