SI5445BDC-T1-E3 The Vishay Dale SI5445BDC-T1-E3 is a P-Channel MOSFET with a drain-source voltage of 8V and a continuous drain current of 5.2A. It features a low Rds(on) of 33mOhm at 4.5V gate-source voltage.
Mfr Part #:

SI5445BDC-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI5445BDC-T1-E3 is a P-Channel MOSFET with a drain-source voltage of 8V and a continuous drain current of 5.2A. It features a low Rds(on) of 33mOhm at 4.5V gate-source voltage.
✓ Total Stock: 151 pcs
$ Price Range: $0.99

SI5445BDC-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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SI5445BDC-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI5445BDC-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI5445BDC-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It operates with a drain-source voltage (Vds) of 8V and can handle a continuous drain current (Id) of up to 5.2A at 25°C. The MOSFET exhibits a low on-state resistance (Rds(on)) of 33mOhm when driven at 4.5V gate-source voltage and 5.2A drain current.

 

The device is housed in an 8-SMD, Flat Lead package, specifically the 1206-8 ChipFET™ form factor, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ).

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1V at 250µA and a gate charge (Qg) of 21nC at 4.5V. The maximum power dissipation is rated at 1.3W at 25°C ambient temperature. This MOSFET is also noted as being halogen-free.

SI5445BDC-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET®
Canonical Name: Vishay Siliconix Si5445BDC P-Channel 1.8-V (G-S) MOSFET
Subcategory: P-Channel

SI5445BDC-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI5445BDC-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI5445BDC-T1-E3 Features

  • P-Channel MOSFET with 8V drain-source voltage.
  • Continuous drain current up to 5.2A.
  • Low Rds(on) of 33mOhm at 4.5V.
  • Surface mount 1206-8 ChipFET package.
  • Halogen-free according to IEC 61249-2-21.

SI5445BDC-T1-E3 Applications

  • Suitable for power switching circuits.
  • Ideal for low voltage applications.
  • Used in portable electronic devices.
  • Efficient for battery powered systems.

SI5445BDC-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI5445BDC-T1-E3?

The drain-source voltage (Vds) for the SI5445BDC-T1-E3 is 8V.

What is the continuous drain current of the SI5445BDC-T1-E3?

The continuous drain current (Id) is 5.2A at 25°C.

What is the Rds(on) for the SI5445BDC-T1-E3?

The Rds(on) is a maximum of 33mOhm at 5.2A drain current and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI5445BDC-T1-E3 in?

The SI5445BDC-T1-E3 is in an 8-SMD, Flat Lead package, specifically the 1206-8 ChipFET™.

Is the SI5445BDC-T1-E3 RoHS compliant?

Yes, the SI5445BDC-T1-E3 is RoHS3 Compliant.

Is this MOSFET halogen-free?

Yes, this MOSFET is halogen-free according to IEC 61249-2-21.

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