SI5440DC-T1-GE3 The Vishay Dale SI5440DC-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous current rating of 6A. It features low on-resistance and is housed in a 1206-8 ChipFET package.
Mfr Part #:

SI5440DC-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI5440DC-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous current rating of 6A. It features low on-resistance and is housed in a 1206-8 ChipFET package.
✓ Total Stock: 66,950 pcs
$ Price Range: $0.99

SI5440DC-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
65,000 pcs
65000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,950 pcs
1950 pcs On Request 1 On Request On Request On Request On Request On Request

SI5440DC-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI5440DC-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI5440DC-T1-GE3 is an N-Channel power MOSFET designed for load switching applications, particularly in notebook PCs. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 6A.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 19mOhm at 9.1A and 10V Vgs, and 0.024 Ohm at Vgs = 4.5V. The gate charge (Qg) is typically 9nC at 10V Vgs. The device operates within a junction temperature range of -55°C to 150°C.

 

This MOSFET utilizes TrenchFET® technology for enhanced performance. It is supplied in a 1206-8 ChipFET package, suitable for surface mounting. The operating temperature range is -55°C to 150°C, with a maximum power dissipation of 6.3W (Tc) or 2.5W (Ta).

 

The SI5440DC-T1-GE3 is lead (Pb)-free and halogen-free, indicating compliance with modern environmental standards.

SI5440DC-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI5440DC-T1-GE3 N-Channel 30V MOSFET
Subcategory: N-Channel

SI5440DC-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: lead (Pb)-free

SI5440DC-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI5440DC-T1-GE3 Features

  • 30V drain-source voltage rating.
  • 6A continuous drain current.
  • Low 19mOhm on-resistance.
  • 9nC typical gate charge.
  • 1206-8 ChipFET surface mount package.

SI5440DC-T1-GE3 Applications

  • Power management in portable devices.
  • Load switching for low-voltage circuits.
  • DC-DC converter output stages.
  • Battery protection circuits.

SI5440DC-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI5440DC-T1-GE3?

30 V.

What is the continuous drain current rating?

6 A at case temperature 25°C.

What is the on-resistance of this MOSFET?

19 mOhm at Vgs=10V and Id=9.1A; 24 mOhm at Vgs=4.5V.

What is the gate charge?

9 nC at Vgs=10V; 6 nC at Vgs=4.5V.

What is the input capacitance?

1200 pF at Vds=10V.

What is the operating temperature range?

-55°C to 150°C (junction and storage).

What package is the SI5440DC-T1-GE3 available in?

1206-8 ChipFET surface-mount package with 8-SMD flat leads.

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