| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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241,067 pcs
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241067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Vishay Dale SI5435BDC-T1-E3 is a P-Channel MOSFET with a drain-to-source voltage rating of 30V and a continuous current capability of 4.3A. It operates within a temperature range of -55°C to 150°C.
The MOSFET is designed for surface mounting and comes in an 8-SMD, Flat Lead package, specifically the 1206-8 ChipFET™ supplier device package. Its on-resistance is a maximum of 45mOhm at 4.3A and 10V Vgs, with a gate charge of 24nC at 10V Vgs. The gate-to-source voltage has a maximum rating of ±20V, and the gate threshold voltage is 3V at 250µA.
Key electrical characteristics include a maximum power dissipation of 1.3W (Ta). The technology employed is MOSFET (Metal Oxide). This component is suitable for various electronic designs requiring a P-channel MOSFET with these specific electrical and thermal parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating (Vdss) for the SI5435BDC-T1-E3 is 30V.
The maximum continuous current for the SI5435BDC-T1-E3 is 4.3A.
The maximum on-resistance (Rds On) for the SI5435BDC-T1-E3 is 45mOhm at a drain current of 4.3A and gate-source voltage of 10V.
The operating temperature range for the SI5435BDC-T1-E3 is -55°C to 150°C (TJ).
The SI5435BDC-T1-E3 is supplied in an 8-SMD, Flat Lead package, specifically the 1206-8 ChipFET™.