| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 1124+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5432DC-T1-GE3 is a TrenchFET® Power MOSFET with an N-Channel configuration, suitable for load switching applications in portable electronics. It features a maximum drain-source voltage of 20V and can handle a continuous drain current of up to 6A at 25°C case temperature.
This MOSFET exhibits a low on-resistance of 20mOhm at a gate-source voltage of 4.5V and a drain current of 8.3A. The gate charge is typically 33 nC at 10V. It operates within a temperature range of -55°C to 150°C.
The component is housed in a 1206-8 ChipFET™ package, designed for surface mounting. Its dimensions and flat lead style are suitable for compact designs. The maximum power dissipation is rated at 6.3W when measured at the case temperature of 25°C, and 2.5W when measured at an ambient temperature of 25°C.
This device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. Its compact size and electrical characteristics make it a suitable choice for power management in portable devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V minimum at VGS=0V, ID=250µA.
6A maximum at Tc=25°C.
20mOhm maximum at Vgs=4.5V, Id=8.3A; 25mOhm maximum at Vgs=2.5V, Id=6A.
-55°C to 150°C junction temperature.
1206-8 ChipFET (8-SMD, Flat Lead) surface mount package.
1.5V maximum at Vds=Vgs, Id=250µA.