| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,632 pcs
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2632 pcs | On Request | 1 | On Request | On Request | 1347+ | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI5424DC-T1-GE3 is an N-Channel TrenchFET Power MOSFET designed for applications such as load switching in notebook PCs. It offers a drain-source voltage of 30V and a continuous drain current of up to 6A.
Key electrical characteristics include a maximum on-resistance of 24mOhm at 4.8A and 10V Vgs, and a gate charge of 32nC at 10V Vgs. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is housed in a 1206-8 ChipFET package, suitable for surface mounting. The package is an 8-SMD, Flat Lead type. It is rated for a maximum power dissipation of 2.5W at 25°C ambient temperature or 6.25W at 25°C case temperature.
The SI5424DC-T1-GE3 is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The continuous drain current is 6A.
The maximum on-resistance is 24mOhm at 4.8A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a 1206-8 ChipFET package, which is an 8-SMD, Flat Lead type suitable for surface mounting.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.