| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,684 pcs
|
2684 pcs | On Request | 1 | On Request | On Request | 15+16+ | On Request | On Request | |
|
48 pcs
|
48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5419DU-T1-GE3 is a P-Channel MOSFET belonging to the TrenchFET® Power MOSFET family. It is designed for efficient power switching applications, offering a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 12A at 25°C case temperature.
This MOSFET boasts a low on-resistance (Rds On) of 20mOhm at 10V Vgs and 12A Id, contributing to reduced conduction losses. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 31W at 25°C case temperature.
The device is housed in a compact PowerPAK® ChipFET™ Single package, suitable for surface mounting. Its thermal resistance characteristics include a junction-to-case (RthJC) of 34°C/W and a junction-to-ambient (RthJA) of 34°C/W under specific conditions.
Key electrical parameters include a gate charge (Qg) of 45 nC at 10V Vgs and an input capacitance (Ciss) of 1400 pF at 15V Vds. The gate-source voltage (Vgs) maximum is ±20V, and the gate-source threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA Id.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vds) for the SI5419DU-T1-GE3 is 30V.
The continuous drain current (Id) for the SI5419DU-T1-GE3 is 12A at 25°C case temperature.
The maximum power dissipation (Pd) for the SI5419DU-T1-GE3 is 31W at 25°C case temperature.
The operating junction and storage temperature range for the SI5419DU-T1-GE3 is -55°C to 150°C.
The SI5419DU-T1-GE3 is in a PowerPAK® ChipFET™ Single package.
Yes, the SI5419DU-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SI5419DU-T1-GE3 is 1 Unlimited.