| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
410 pcs
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410 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5411EDU-T1-GE3 is a P-Channel MOSFET designed for various power management applications. It operates with a maximum Drain-Source Voltage (VDS) of 12V and can handle a continuous drain current of up to 25A at 25°C case temperature.
This MOSFET utilizes TrenchFET technology and comes in a thermally enhanced PowerPAK ChipFET package, offering a small footprint and low on-resistance. Key electrical characteristics include a maximum on-resistance of 8.2mOhm at 6A and 4.5V VGS, and a gate charge of 105 nC at 8V VGS.
The device is suitable for portable devices such as smartphones, tablet PCs, and mobile computing, serving as a battery switch, load switch, or for general power management. It operates within a temperature range of -50°C to 150°C (TJ) and has a maximum power dissipation of 31W at 25°C case temperature.
The SI5411EDU-T1-GE3 is designed for surface mounting, utilizing the PowerPAK ChipFET Single package. It is rated for 100% R g and UIS tested and provides typical ESD protection of 5000V (HBM).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 12V.
The continuous drain current is 25A at 25°C case temperature.
The maximum on-resistance is 8.2mOhm at 6A drain current and 4.5V gate-source voltage.
It is in a PowerPAK ChipFET Single package.
The operating temperature range is -50°C to 150°C (TJ).