| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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The Vishay Dale SI5406DC-T1-E3 is an N-Channel MOSFET designed for load and power switching applications. It offers a drain-source voltage (Vds) of 12V and a continuous drain current (Id) of 6.9A at 25°C ambient temperature. The MOSFET exhibits a low on-state resistance (Rds(on)) of 20mOhm at a gate-source voltage (Vgs) of 4.5V, and 25mOhm at 2.5V.
This device utilizes TrenchFET Power MOSFET technology, rated for 2.5V, and boasts low thermal resistance. It operates within a temperature range of -55°C to 150°C (TJ). The package is an 8-SMD, Flat Lead 1206-8 ChipFET, suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 600mV minimum at 1.2mA and a gate charge (Qg) of 20nC at 4.5V. The maximum power dissipation is 1.3W at 25°C ambient temperature. This MOSFET is suitable for battery-operated systems, load switching in cell phones and pagers, and PA switches in cellular devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI5406DC-T1-E3 MOSFET is 12V.
The continuous drain current (Id) is 6.9A at 25°C ambient temperature.
The on-state resistance (Rds(on)) is a maximum of 20mOhm at 6.9A drain current and 4.5V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
The SI5406DC-T1-E3 MOSFET is in an 8-SMD, Flat Lead 1206-8 ChipFET package.
Yes, the SI5406DC-T1-E3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.