| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
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400 pcs | On Request | 1 | On Request | On Request | 2013+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI5404BDC-T1-E3 from Vishay Dale is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5.4A at a given temperature. The MOSFET has a low on-resistance (Rds On) of 28mOhm at 5.4A and 4.5V gate-source voltage, ensuring efficient power handling.
This component operates within a temperature range of -55°C to 150°C (TJ). It utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 1.5V at 250µA. The maximum gate-source voltage is ±12V.
The SI5404BDC-T1-E3 is packaged in an 8-SMD, Flat Lead configuration, specifically the 1206-8 ChipFET™ package, and is designed for surface mounting. Its maximum power dissipation is rated at 1.3W (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
The maximum continuous drain current is 5.4A at ambient temperature.
The maximum on-resistance is 28mOhm at a drain current of 5.4A and gate voltage of 4.5V.
It comes in a surface-mount 1206-8 ChipFET package with flat leads.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 1.5V at a drain current of 250µA.