| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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186,000 pcs
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186000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI5403DC-T1-GE3 is a P-Channel MOSFET designed for various power applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 6A at 25°C case temperature. The MOSFET utilizes TrenchFET technology for improved performance and features a low on-resistance (Rds On) of 30mOhm at 10V gate-source voltage.
This component is suitable for load switching and DC/DC converter applications. It operates within a temperature range of -55°C to +150°C (TJ). The device is packaged in an 8-SMD, Flat Lead 1206-8 ChipFET package, designed for surface mounting.
Key electrical characteristics include a gate charge (Qg) of 42 nC at 10V and a gate-source threshold voltage (Vgs(th)) of 3V at 250µA. The maximum power dissipation is rated at 2.5W (Ta) and 6.3W (Tc). The MOSFET is lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) of the SI5403DC-T1-GE3 is 30V.
The continuous drain current (Id) for the SI5403DC-T1-GE3 is 6A at 25°C case temperature.
The on-resistance (Rds On) of the SI5403DC-T1-GE3 is a maximum of 30mOhm at 7.2A drain current and 10V gate-source voltage.
The operating junction and storage temperature range for the SI5403DC-T1-GE3 is -55°C to +150°C.
The SI5403DC-T1-GE3 MOSFET is in a 1206-8 ChipFET package, which is an 8-SMD, Flat Lead surface mount type.
The SI5403DC-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SI5403DC-T1-GE3 is 1.