| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI4992EY-T1-E3 is a dual N-channel MOSFET with a Metal Oxide Semiconductor (MOSFET) technology. It is designed for surface mount applications and comes in an 8-SOIC package.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 75V and a continuous drain current of 3.6A. The on-resistance (Rds On) is a maximum of 48mOhm at 4.8A and 10V, with a gate charge (Qg) of 21nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. This device features a logic level gate.
Operating temperature ranges from -55°C to 175°C (TJ). The component has a power dissipation rating of 1.4W. The configuration is 2 N-Channel (Dual).
This MOSFET is suitable for various electronic designs requiring efficient switching and power management in a compact surface mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 75V.
The continuous drain current is 3.6A.
The maximum on-resistance (Rds On) is 48mOhm at 4.8A and 10V.
The operating temperature is -55°C to 175°C (TJ).
The SI4992EY-T1-E3 is supplied in an 8-SOIC package.
Yes, the SI4992EY-T1-E3 is RoHS3 Compliant.