SI4973DY-T1-E3 The Vishay Dale SI4973DY-T1-E3 is a 2 P-Channel MOSFET array with a 30V drain-source voltage and 5.8A continuous drain current. It features a Logic Level Gate and is housed in an 8-SOIC package.
Mfr Part #:

SI4973DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4973DY-T1-E3 is a 2 P-Channel MOSFET array with a 30V drain-source voltage and 5.8A continuous drain current. It features a Logic Level Gate and is housed in an 8-SOIC package.
✓ Total Stock: 2,000 pcs
$ Price Range: $0.99

SI4973DY-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request 946 On Request On Request

SI4973DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI4973DY-T1-E3 Description

Short technical summary and product information.

The SI4973DY-T1-E3 from Vishay Dale is a dual P-Channel MOSFET array designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5.8A at 25°C. The MOSFET features a Logic Level Gate, making it suitable for low-voltage control applications.

 

With a low on-resistance (Rds On) of 23mOhm at 7.6A and 10V, this component minimizes power loss during operation. The gate charge (Qg) is 56nC at 10V, and the gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. The device has a maximum power dissipation of 1.1W and operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET array is supplied in an 8-SOIC package, designed for surface mounting. The compact size and surface mount capability make it ideal for integration into space-constrained designs. The TrenchFET® series technology ensures efficient performance.

 

Environmental compliance includes RoHS3 compliance and an MSL rating of 1. The device is suitable for applications requiring reliable switching and power management.

SI4973DY-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: SI4973DY-T1-E3
Subcategory: Transistors - FETs, MOSFETs - Arrays

SI4973DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4973DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4973DY-T1-E3 Features

  • Dual P-Channel MOSFET array
  • 30V drain-to-source voltage
  • 5.8A continuous drain current
  • Logic Level Gate feature
  • Surface mount 8-SOIC package

SI4973DY-T1-E3 Applications

  • Load switching in battery-powered devices.
  • Power management in portable electronics.
  • H-bridge motor control circuits.
  • Battery protection circuits.

SI4973DY-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the SI4973DY-T1-E3?

The drain-to-source voltage (Vdss) for the SI4973DY-T1-E3 is 30V.

What is the continuous drain current for the SI4973DY-T1-E3?

The continuous drain current (Id) for the SI4973DY-T1-E3 is 5.8A at 25°C.

What is the on-resistance (Rds On) of the SI4973DY-T1-E3?

The Rds On is a maximum of 23mOhm at 7.6A and 10V.

What is the operating temperature range for this MOSFET array?

The operating temperature range is -55°C to 150°C (TJ).

How is the SI4973DY-T1-E3 mounted?

The SI4973DY-T1-E3 is designed for surface mounting.

What type of gate does the SI4973DY-T1-E3 feature?

The SI4973DY-T1-E3 features a Logic Level Gate.

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