| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
475,789 pcs
|
475789 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4966DY-T1-GE3 is a dual N-channel MOSFET belonging to the TrenchFET Power MOSFET family. It offers a drain-source voltage (VDS) of 20V and a low on-state resistance (Rds(on)) of 25mΩ at a gate-source voltage (VGS) of 4.5V and a drain current (ID) of 7.1A. The device also exhibits a gate charge (Qg) of 50nC at 4.5V VGS.
This MOSFET is suitable for applications requiring logic-level gate drive. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2W at 25°C ambient temperature. The component is housed in a standard 8-SOIC surface-mount package.
Key electrical characteristics include a gate threshold voltage (VGS(th)) of 1.5V maximum at 250µA ID, and a continuous drain current of 7.1A at 25°C ambient. The device is compliant with RoHS3 directives and is halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-SOIC surface mount package.
-55°C to 150°C.
Yes, it is halogen-free.
7.1A at 25°C ambient.
1.5V maximum.
25mΩ at VGS=4.5V, ID=7.1A.