SI4966DY-T1-E3 The Vishay Dale SI4966DY-T1-E3 is a dual N-channel MOSFET designed for surface mounting. It features a 20V drain-source voltage and low on-state resistance.
Mfr Part #:

SI4966DY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4966DY-T1-E3 is a dual N-channel MOSFET designed for surface mounting. It features a 20V drain-source voltage and low on-state resistance.
✓ Total Stock: 4,271 pcs
$ Price Range: $0.99

SI4966DY-T1-E3 Available from 3 distributors

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2,939 pcs
2939 pcs On Request 1 On Request On Request 24+ On Request On Request
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696 pcs
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636 pcs
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SI4966DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI4966DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4966DY-T1-E3 is a dual N-channel MOSFET housed in an 8-SOIC package, suitable for surface mount applications. This device offers a drain-source voltage (VDS) of 20V and a low drain-source on-state resistance (RDS(on)) of 25mΩ at a gate-source voltage (VGS) of 4.5V and a continuous drain current (ID) of 7.1A. It also exhibits an RDS(on) of 35mΩ at 2.5V VGS and 6.0A ID.

 

Key electrical characteristics include a gate threshold voltage (VGS(th)) of 1.5V maximum at 250µA and a gate charge (Qg) of 50nC maximum at 4.5V VGS. The MOSFET is rated for a continuous drain current of 7.1A at 25°C ambient temperature and can dissipate up to 2W of power at 25°C. The operating temperature range is from -55°C to 150°C.

 

This MOSFET is designed with TrenchFET technology and features a logic-level gate, making it suitable for various switching applications. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. The package is an 8-SOIC with a width of 3.90mm.

SI4966DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 2.5-V (G-S) MOSFET
Subcategory: Arrays

SI4966DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4966DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4966DY-T1-E3 Features

  • Dual N-Channel MOSFET configuration.
  • 20V drain-source voltage rating.
  • Low 25mΩ on-state resistance.
  • Logic level gate operation.
  • Surface mount 8-SOIC package.

SI4966DY-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for battery-powered devices.
  • Used in low-voltage power management.
  • Effective in load switch circuits.

SI4966DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI4966DY-T1-E3?

The maximum drain-source voltage is 20V.

What package is the SI4966DY-T1-E3 available in?

It is available in an 8-SOIC surface-mount package.

What is the operating temperature range of the SI4966DY-T1-E3?

The operating junction temperature range is -55°C to 150°C.

What is the maximum gate threshold voltage for the SI4966DY-T1-E3?

The maximum gate threshold voltage is 1.5V at VDS=VGS, ID=250µA.

What is the on-resistance of the SI4966DY-T1-E3 at 4.5V gate drive?

The maximum on-resistance is 25mOhm at VGS=4.5V and ID=7.1A.

What is the total gate charge of the SI4966DY-T1-E3?

The maximum gate charge is 50nC at VGS=4.5V.

Does the SI4966DY-T1-E3 support logic-level gate drive?

Yes, it features a Logic Level Gate for low-voltage logic control.

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