SI4965DY-T1-E3 The Vishay Dale SI4965DY-T1-E3 is a dual P-channel MOSFET with a drain-source voltage of 8V. It is designed for surface mounting in an 8-SOIC package.
Mfr Part #:

SI4965DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4965DY-T1-E3 is a dual P-channel MOSFET with a drain-source voltage of 8V. It is designed for surface mounting in an 8-SOIC package.
✓ Total Stock: 2,716 pcs
$ Price Range: $0.99

SI4965DY-T1-E3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,716 pcs
2716 pcs On Request 1 On Request On Request 11+ On Request On Request

SI4965DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4965DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4965DY-T1-E3 is a dual P-channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 8V and a low on-resistance (Rds On) of 21mOhm at 8A and 4.5V gate-source voltage. The gate charge (Qg) is specified at a maximum of 55nC at 4.5V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2W. It utilizes MOSFET technology and is characterized by a logic level gate, making it suitable for low-voltage applications. The gate threshold voltage (Vgs(th)) is a minimum of 450mV at 250µA.

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) format, the SI4965DY-T1-E3 is designed for surface mounting. Its configuration includes two P-channel MOSFETs, offering flexibility in circuit design. The component is listed as RoHS3 compliant, with an MSL of 1 Unlimited, and REACH unaffected.

SI4965DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4965DY-T1-E3 Dual P-Channel MOSFET
Subcategory: Dual P-Channel

SI4965DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4965DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4965DY-T1-E3 Features

  • Dual P-channel MOSFET configuration.
  • 8V maximum drain-source voltage.
  • 21mOhm maximum on-resistance.
  • Logic level gate feature.
  • Surface mount 8-SOIC package.

SI4965DY-T1-E3 Applications

  • Suitable for low-voltage switching.
  • Ideal for power management circuits.
  • Used in battery-powered devices.
  • Applicable in portable electronics.

SI4965DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SI4965DY-T1-E3?

The maximum drain-to-source voltage (Vdss) for the SI4965DY-T1-E3 is 8V.

What is the on-resistance of the SI4965DY-T1-E3?

The maximum on-resistance (Rds On) is 21mOhm at a drain current of 8A and gate-source voltage of 4.5V.

What is the gate charge for the SI4965DY-T1-E3?

The maximum gate charge (Qg) is 55nC at a gate-source voltage of 4.5V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4965DY-T1-E3 supplied in?

It is supplied in an 8-SOIC package.

Is the SI4965DY-T1-E3 RoHS compliant?

Yes, the SI4965DY-T1-E3 is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the SI4965DY-T1-E3?

The Moisture Sensitivity Level is 1 Unlimited.

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