SI4963BDY-T1-E3 The Vishay Dale SI4963BDY-T1-E3 is a dual P-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a 4.9A current rating.
Mfr Part #:

SI4963BDY-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4963BDY-T1-E3 is a dual P-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a 4.9A current rating.
✓ Total Stock: 303,500 pcs
$ Price Range: $0.99

SI4963BDY-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
301,000 pcs
301000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 944 On Request On Request

SI4963BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4963BDY-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI4963BDY-T1-E3 is a dual P-Channel MOSFET array suitable for surface mount applications. It offers a drain-to-source voltage (Vdss) of 20V and can handle a continuous current of 4.9A. The MOSFET exhibits a low on-resistance (Rds On) of 32mOhm at 6.5A and 4.5V, with a gate charge (Qg) of 21nC at 4.5V. Its gate threshold voltage (Vgs(th)) is a maximum of 1.4V at 250µA, and it features a logic level gate for easier drive.

 

The device is packaged in an 8-SOIC (0.154", 3.90mm Width) and operates within a temperature range of -55°C to 150°C (TJ). It has a power dissipation of 1.1W. The MOSFET technology is Metal Oxide.

 

This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. The REACH status is unaffected.

SI4963BDY-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: SI4963BDY-T1-E3 20V 4.9A 8-SOIC Dual P-Channel MOSFET
Subcategory: 2 P-Channel

SI4963BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4963BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4963BDY-T1-E3 Features

  • Dual P-Channel MOSFET array
  • 20V drain-source voltage rating
  • 4.9A continuous current capability
  • Low 32mOhm on-resistance
  • Surface mount 8-SOIC package

SI4963BDY-T1-E3 Applications

  • Power switching applications
  • Load management circuits
  • Battery powered devices
  • Low-voltage motor control

SI4963BDY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI4963BDY-T1-E3?

The drain-to-source voltage (Vdss) for the SI4963BDY-T1-E3 is 20V.

What is the continuous current rating of the SI4963BDY-T1-E3?

The SI4963BDY-T1-E3 has a continuous current rating of 4.9A.

What is the on-resistance of the SI4963BDY-T1-E3?

The on-resistance (Rds On) of the SI4963BDY-T1-E3 is a maximum of 32mOhm at 6.5A and 4.5V.

What is the operating temperature range for this MOSFET array?

The SI4963BDY-T1-E3 operates between -55°C and 150°C (TJ).

What package type is the SI4963BDY-T1-E3 supplied in?

The SI4963BDY-T1-E3 is supplied in an 8-SOIC package.

Is the SI4963BDY-T1-E3 RoHS compliant?

Yes, the SI4963BDY-T1-E3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI4963BDY-T1-E3?

The Moisture Sensitivity Level (MSL) for the SI4963BDY-T1-E3 is 1 Unlimited.

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