| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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464 pcs
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464 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Package / Case | |
| Tape & Reel |
The SI4953DY is a Dual P-Channel Enhancement Mode MOSFET manufactured by SIL. This component is designed using an advanced process to minimize on-state resistance while maintaining superior switching performance. It is well-suited for low voltage and battery-powered applications.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 30V. The on-resistance is specified at 0.005 Ohms typical at VGS = -10V and 0.00775 Ohms typical at VGS = -4.5V. The continuous drain current is rated at 29A typical, with a typical gate charge of 61 nC.
The SI4953DY is available in an 8-PIN SOIC N package, supplied on tape and reel. Its design makes it suitable for various low-power electronic applications where efficient switching and low resistance are critical.
This MOSFET is manufactured using Fairchild Semiconductor's advanced process technology, ensuring reliable performance for demanding applications. The P-Channel configuration offers specific advantages in certain circuit designs, particularly in power management and switching applications.
The Drain-Source Breakdown Voltage for the SI4953DY is 30V.
The typical On-Resistance of the SI4953DY at VGS = -10V is 0.005 Ohms.
The typical On-Resistance of the SI4953DY at VGS = -4.5V is 0.00775 Ohms.
The typical Continuous Drain Current for the SI4953DY is 29A.
The typical Gate Charge for the SI4953DY is 61 nC.
The SI4953DY MOSFET is supplied in an 8-PIN SOIC N package.