| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,415 pcs
|
5415 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
85 pcs
|
85 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI4948BEY-T1-E3 is a dual P-Channel MOSFET from Vishay Dale, designed for general purpose switching and power management applications. It features a 60V drain-source voltage rating and a continuous drain current of 2.4A at 25°C ambient temperature. The device has a maximum on-resistance of 120mOhm at 3.1A and 10V gate drive, with a logic level gate threshold allowing direct interface with low-voltage logic. Gate charge is 22nC at 10V, ensuring efficient switching. The MOSFET is housed in a standard 8-SOIC surface mount package with a compact 3.90mm width. Operating junction temperature range is -55°C to 175°C, offering robust thermal performance. The dual configuration integrates two independent P-Channel MOSFETs in a single package, saving board space and simplifying design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The package is 8-SOIC (0.154", 3.90mm Width).
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage is 3V at 250µA.
The maximum on-resistance is 120mOhm at 3.1A and 10V.
The maximum gate charge is 22nC at 10V.
Yes, it is a dual P-Channel MOSFET (2 P-Channel).