| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,778 pcs
|
11778 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4947ADY-T1-E3 is a P-Channel Dual MOSFET Array designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Ids) of 3A. The device exhibits a low Rds On of 80mOhm at 3.9A and 10V, indicating efficient power handling.
This MOSFET array operates within a temperature range of -55°C to 150°C (TJ). It features a logic level gate, making it suitable for low-voltage control applications. The component is housed in an 8-SOIC package with a surface mount configuration, facilitating integration into compact circuit designs.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1V minimum at 250µA and a gate charge (Qg) of 8nC maximum at 5V. The maximum power dissipation is rated at 1.2W. The device also specifies a breakdown voltage between gate and source of ±20V.
Applications for this MOSFET array include drivers for relays, solenoids, lamps, and displays, as well as use in battery-operated systems and power supply converter circuits. Its surface mount design and specific electrical parameters make it a versatile component for power switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
3A.
80mOhm at 3.9A, 10V.
1V minimum at 250µA.
1.2W.
8nC at 5V.
-55°C to 150°C.