SI4946BEY-T1-GE3 The Vishay Dale SI4946BEY-T1-GE3 is a dual N-channel MOSFET designed for power applications. It offers a 60V drain-source voltage and a maximum continuous drain current of 6.5A.
Mfr Part #:

SI4946BEY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4946BEY-T1-GE3 is a dual N-channel MOSFET designed for power applications. It offers a 60V drain-source voltage and a maximum continuous drain current of 6.5A.
✓ Total Stock: 1,405 pcs
$ Price Range: $0.99

SI4946BEY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,254 pcs
1254 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
151 pcs
151 pcs On Request 1 On Request On Request 12+ On Request On Request

SI4946BEY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4946BEY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale Si4946BEY-T1-GE3 is a dual N-channel MOSFET featuring TrenchFET technology. It is rated for a 60V drain-source voltage and a maximum continuous drain current of 6.5A at 25°C case temperature. The device boasts a low on-state resistance, with a maximum of 0.041 Ohms at 10V gate-source voltage and 5.3A drain current.

 

This MOSFET operates over a wide temperature range from -55°C to 175°C (TJ). It is housed in an 8-SOIC package suitable for surface mounting. The logic level gate feature makes it compatible with lower gate drive voltages. The Si4946BEY-T1-GE3 is compliant with RoHS directives and is halogen-free.

 

Key electrical characteristics include a gate charge of 9.2 nC typical at 10V VGS and an input capacitance of 840pF maximum at 30V VDS. The device is designed for applications requiring efficient power switching and management.

SI4946BEY-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si4946BEY
Canonical Name: Vishay Dale Si4946BEY Dual N-Channel 60V MOSFET
Subcategory: Arrays

SI4946BEY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI4946BEY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4946BEY-T1-GE3 Features

  • Dual N-channel 60V MOSFET
  • Low Rds(on) of 41mOhm max
  • Logic level gate compatible
  • Wide operating temperature range
  • Surface mount 8-SOIC package

SI4946BEY-T1-GE3 Applications

  • Power management circuits
  • Switching power supplies
  • Load switch applications
  • Battery powered devices
  • General purpose switching

SI4946BEY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4946BEY-T1-GE3?

The maximum drain-source voltage is 60V.

What is the continuous drain current rating?

The continuous drain current is 6.5A at 25°C case temperature.

What is the maximum Rds(on) for this MOSFET?

The maximum Rds(on) is 0.041 Ohms at 10V Vgs and 5.3A Id.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SI4946BEY-T1-GE3 in?

It is supplied in an 8-SOIC package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

Does this MOSFET feature Halogen-free construction?

Yes, it is Halogen-free.

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