| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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69,538 pcs
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69538 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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43,520 pcs
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43520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,235 pcs
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3235 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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288 pcs
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288 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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102 pcs
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102 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4946BEY-T1-E3 is a dual N-channel MOSFET featuring TrenchFET technology. It is rated for a drain-source voltage of 60V and a continuous drain current of 6.5A at 25°C (TC). The MOSFET exhibits a low on-state resistance, with Rds(on) as low as 0.041Ω at VGS = 10V and ID = 5.3A, and 0.052Ω at VGS = 4.5V and ID = 4.7A. Its gate charge is typically 25nC at VGS = 10V, and the gate-source threshold voltage is a maximum of 3V at 250µA.
This device operates over a wide temperature range from -55°C to 175°C (TJ). It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package. The maximum power dissipation is 3.7W at 25°C (TC). The SI4946BEY-T1-E3 is compliant with RoHS3 directives and is halogen-free, making it suitable for various electronic designs requiring reliable power switching.
Key electrical characteristics include a pulsed drain current of 30A and a single-pulse avalanche energy of 7.2mJ. The thermal resistance from junction-to-ambient is a maximum of 62.5°C/W, and junction-to-foot is 41°C/W under steady-state conditions. This MOSFET is designed for applications requiring efficient power handling and switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The maximum continuous drain current is 6.5A at TC = 25°C.
The Rds(on) is a maximum of 0.041Ω at VGS = 10V and ID = 5.3A, and 0.052Ω at VGS = 4.5V and ID = 4.7A.
The operating junction and storage temperature range is -55°C to 175°C.
It is in an 8-SOIC package.
Yes, it is RoHS3 Compliant.
Yes, it is Halogen-free.