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SI4944DY-T1-E3 SI4944DY-T1-E3 is a dual N-channel MOSFET from Vishay Dale with a 30V drain-source voltage rating and 9.3A continuous drain current, housed in an 8-SOIC surface-mount package.
Mfr Part #:

SI4944DY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
SI4944DY-T1-E3 is a dual N-channel MOSFET from Vishay Dale with a 30V drain-source voltage rating and 9.3A continuous drain current, housed in an 8-SOIC surface-mount package.
✓ Total Stock: 300 pcs
$ Price Range: $0.99

SI4944DY-T1-E3 Available from 3 distributors

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✓ Non-Authorised
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Braun Electronic Components ✓
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100 pcs
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100 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
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100 pcs
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100 pcs On Request 1 On Request On Request On Request On Request On Request
RAD ✓
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100 pcs
On Request
100 pcs On Request 1 On Request On Request On Request On Request On Request
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SI4944DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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SI4944DY-T1-E3 Description

Short technical summary and product information.

The SI4944DY-T1-E3 is a dual N-channel logic-level MOSFET from Vishay Dale. It features a maximum drain-to-source voltage of 30V and a continuous drain current of 9.3A. The on-resistance is 9.5mOhm maximum at 10V gate drive. This device is designed for low-voltage switching applications.

 

The two independent N-channel MOSFETs are integrated in a single 8-SOIC package, enabling compact and efficient PCB layouts. The operating temperature range is -55°C to 150°C, suitable for industrial environments. The logic-level gate threshold voltage (3V maximum) allows direct control from low-voltage logic.

 

Typical applications include load switching, power management, and DC-DC converter synchronous rectification. The surface-mount 8-SOIC package with 0.154" body width is widely used and easy to assemble.

SI4944DY-T1-E3 Quick Information

Canonical Name: Vishay Dale SI4944DY-T1-E3 Dual N-Channel MOSFET
Subcategory: Dual N-Channel MOSFET

SI4944DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4944DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4944DY-T1-E3 Features

  • Dual N-channel MOSFET in a single package.
  • 30V maximum drain-to-source voltage.
  • 9.3A continuous drain current rating.
  • Logic-level gate threshold voltage.
  • 8-SOIC surface-mount package.

SI4944DY-T1-E3 Applications

  • Used in low-voltage power switching circuits.
  • Ideal for load switching in portable devices.
  • Suitable for DC-DC converter synchronous rectification.
  • Applicable in battery management systems.

SI4944DY-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI4944DY-T1-E3?

30V.

What is the continuous drain current rating?

9.3A.

What is the on-resistance?

9.5mOhm maximum at 12.2A, 10V.

What is the package type?

8-SOIC (0.154\", 3.90mm Width).

What is the operating temperature range?

-55°C to 150°C.

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