| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| FET Feature | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
This Vishay Dale SI4943BDY-T1-GE3 is a dual P-channel MOSFET array designed for various electronic applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current of 6.3A, with a power dissipation of 1.1W.
The MOSFET array operates within a temperature range of -55°C to 150°C (TJ). It features a low Rds On of 19mOhm at 8.4A and 10V, and a gate charge (Qg) of 25nC at 5V. The gate threshold voltage (Vgs(th)) is 3V at 250µA. This component utilizes MOSFET (Metal Oxide) technology and is configured as 2 P-Channel devices.
Designed with Logic Level Gate technology, this array is suitable for applications requiring efficient switching. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, making it compatible with standard PCB assembly processes.
Key electrical characteristics include a 20V drain-source voltage and 6.3A continuous drain current. The 1.1W power rating and surface-mount 8-SOIC package are important considerations for board layout and thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the SI4943BDY-T1-GE3 is 20V.
The continuous drain current (Id) for the SI4943BDY-T1-GE3 is 6.3A.
The power dissipation for the SI4943BDY-T1-GE3 is 1.1W.
The operating temperature range for the SI4943BDY-T1-GE3 is -55°C to 150°C (TJ).
The SI4943BDY-T1-GE3 is in an 8-SOIC package.
The Rds On (Max) for the SI4943BDY-T1-GE3 is 19mOhm at 8.4A and 10V.
Yes, the SI4943BDY-T1-GE3 features a Logic Level Gate.