| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 1036 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI4943BDY-T1-E3 from Vishay Dale is a dual P-Channel MOSFET with a drain-source voltage rating of 20V and a continuous drain current of 6.3A. This device is designed for surface mount applications and comes in an 8-SOIC package.
Key electrical characteristics include a maximum on-resistance of 19mOhm at 8.4A and 10V, and a gate charge of 25nC maximum at 5V. The gate threshold voltage is 3V maximum at 250µA. The MOSFET operates within a temperature range of -55°C to 150°C.
This component is suitable for various electronic designs requiring efficient switching and power management. Its logic level gate feature simplifies integration with lower voltage control signals.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-SOIC.
-55°C to 150°C (junction).
6.3A.
2 P-Channel (Dual).
3V at 250µA.
1.1W.