SI4940DY-T1-E3 The Vishay Dale SI4940DY-T1-E3 is a Dual N-Channel MOSFET designed for power applications. It features a 40V drain-source voltage and a continuous drain current of 4.2A.
Mfr Part #:

SI4940DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4940DY-T1-E3 is a Dual N-Channel MOSFET designed for power applications. It features a 40V drain-source voltage and a continuous drain current of 4.2A.
✓ Total Stock: 275 pcs
$ Price Range: $0.99

SI4940DY-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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SI4940DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI4940DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4940DY-T1-E3 is a Dual N-Channel Power MOSFET from the TrenchFET series. It offers a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 4.2A at 25°C.

 

This MOSFET has a low on-state resistance (Rds(on)) of 36mOhm at 5.7A and 10V Vgs, making it efficient for power switching applications. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA, indicating it can be driven by lower gate voltages.

 

Packaged in an 8-SOIC surface mount configuration, the SI4940DY-T1-E3 operates within a junction temperature range of -55°C to 150°C. It is compliant with RoHS Directive 2002/95/EC and is halogen-free, suitable for various electronic designs requiring reliable power management.

 

Key electrical characteristics include a maximum power dissipation of 2.1W at 25°C and a typical total gate charge (Qg) of 14nC at 10V Vgs. The device also features a logic level gate, facilitating integration with microcontrollers and other low-voltage logic circuits.

SI4940DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si4940DY Dual N-Channel 40V Power MOSFET
Subcategory: Dual N-Channel

SI4940DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI4940DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4940DY-T1-E3 Features

  • Dual N-Channel 40V Power MOSFET
  • Low Rds(on) of 36mOhm at 5.7A, 10V
  • Logic Level Gate for easy driving
  • 8-SOIC surface mount package
  • RoHS3 Compliant and Halogen-free

SI4940DY-T1-E3 Applications

  • Efficient power switching applications
  • DC-DC converters
  • Load switching
  • Power management circuits
  • Battery powered devices

SI4940DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SI4940DY-T1-E3?

The drain-source voltage (Vds) is 40V.

What is the continuous drain current for the SI4940DY-T1-E3?

The continuous drain current is 4.2A.

What is the Rds(on) of the SI4940DY-T1-E3?

The Rds(on) is a maximum of 36mOhm at 5.7A and 10V Vgs.

What package type is the SI4940DY-T1-E3 available in?

The SI4940DY-T1-E3 is available in an 8-SOIC package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

Is the SI4940DY-T1-E3 RoHS compliant?

Yes, the SI4940DY-T1-E3 is RoHS3 Compliant.

Is the SI4940DY-T1-E3 halogen-free?

Yes, the SI4940DY-T1-E3 is halogen-free.

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