SI4936DY

The On Semiconductor SI4936DY is an N-Channel Power MOSFET with a dual configuration, offering two N-Channel MOSFETs in a single package. This device is designed for surface mount applications and comes in an 8-SOIC package. It boasts a drain-to-source voltage (Vdss) of 30V and a continuous drain current capability of 5.8A at ambient temperature. The on-resistance (Rds On) is a maximum of 37mOhm at 5.8A and 10V gate-source voltage, with a gate charge (Qg) of 25nC at 10V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ). Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor principles.

This MOSFET is suitable for various power management applications where efficient switching and low conduction losses are required. The surface mount package facilitates integration into compact electronic designs. The device has a power dissipation of 900mW at ambient temperature. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA.

Key electrical characteristics include a maximum drain-to-source voltage of 30V and a maximum on-resistance of 37mOhm. The input capacitance (Ciss) is 460pF at 15V. The operating temperature range ensures reliability in demanding environments.