| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,036 pcs
|
5036 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,325 pcs
|
1325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4936CDY-T1-GE3 is a dual N-channel power MOSFET with a TrenchFET design. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (ID) of up to 5.8A at 25°C case temperature.
Key electrical characteristics include a maximum Rds(on) of 40mOhm at 5A and 10V Vgs, and a gate charge (Qg) of 9nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA.
This MOSFET is housed in an 8-SOIC package with a surface mount type. It operates within a temperature range of -55°C to 150°C (TJ). The device is suitable for applications such as low current DC/DC conversion and notebook system power.
Vishay Dale provides this component with RoHS3 compliance and an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 40 mOhm at Vgs=10V and Id=5A.
The continuous drain current is 5.8 A at Tc=25°C and 5 A at Ta=25°C.
The maximum gate threshold voltage is 3 V at Vds=Vgs and Id=250 µA.
Maximum power dissipation is 2.3 W at Tc=25°C and 1.7 W at Ta=25°C.