| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4936CDY-T1-E3 is a dual N-channel power MOSFET featuring TrenchFET technology. It offers a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 5.8A at 25°C case temperature. The MOSFET exhibits a low on-resistance (RDS(on)) of 40mOhm at 5A and 10V gate-source voltage, and a typical gate charge (Qg) of 9nC at 10V.
This device is suitable for applications such as low current DC/DC conversion and notebook system power. It operates within a temperature range of -55°C to +150°C (TJ) and is housed in an 8-SOIC surface mount package. The thermal resistance junction-to-ambient is rated at a maximum of 75°C/W.
Key electrical characteristics include a gate-source threshold voltage (VGS(th)) of 3V maximum and an input capacitance (Ciss) of 325pF maximum at 15V. The MOSFET is designed with a logic level gate, enhancing its versatility in various circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 30V at VGS = 0V and ID = 250 μA.
The maximum continuous drain current is 5.8A at TC = 25°C and 5A at TA = 25°C (surface mounted on 1" x 1" FR4 board, t = 10s).
The maximum on-resistance is 40 mOhm at VGS = 10V and ID = 5A, and 50 mOhm at VGS = 4.5V and ID = 5A.
It is available in an 8-SOIC (0.154", 3.90mm width) surface-mount package.
The operating junction and storage temperature range is -55°C to +150°C.
The maximum gate-source threshold voltage is 3V at VDS = VGS and ID = 250 μA.