SI4936BDY-T1-E3 The Vishay Dale SI4936BDY-T1-E3 is a dual N-channel MOSFET designed for surface mounting. It features a 30V drain-source voltage and a continuous drain current of 6.9A.
Mfr Part #:

SI4936BDY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4936BDY-T1-E3 is a dual N-channel MOSFET designed for surface mounting. It features a 30V drain-source voltage and a continuous drain current of 6.9A.
✓ Total Stock: 205,924 pcs
$ Price Range: $0.99

SI4936BDY-T1-E3 Available from 3 distributors

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SI4936BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4936BDY-T1-E3 Description

Short technical summary and product information.

The SI4936BDY-T1-E3 from Vishay Dale is a dual N-channel MOSFET belonging to the Transistors - FETs, MOSFETs - Arrays category. This component is designed for surface mount applications and comes in an 8-SOIC package.

 

Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current of 6.9A. The on-resistance (Rds On) is a maximum of 35mOhm at 5.9A and 10V. It also features a logic level gate, making it suitable for various control applications. The maximum power dissipation is rated at 2.8W.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). Its input capacitance (Ciss) is 530pF at 15V, and the gate charge (Qg) is 15nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA.

 

Designed for integration into electronic circuits, this MOSFET is suitable for applications requiring efficient switching and power management. Its dual N-channel configuration and surface mount package facilitate its use in compact designs.

SI4936BDY-T1-E3 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: Vishay Dale SI4936BDY-T1-E3 Dual N-Channel MOSFET
Subcategory: Array

SI4936BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4936BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4936BDY-T1-E3 Features

  • Dual N-channel MOSFET configuration.
  • 30V drain-to-source voltage rating.
  • 6.9A continuous drain current.
  • 35mOhm maximum on-resistance.
  • Logic level gate feature.

SI4936BDY-T1-E3 Applications

  • Power management in portable devices.
  • DC-DC converter switching circuits.
  • Load switching in battery-powered systems.
  • Motor control for small motors.
  • General purpose switching applications.

SI4936BDY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI4936BDY-T1-E3?

30V.

What package is the SI4936BDY-T1-E3 available in?

8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range of the SI4936BDY-T1-E3?

-55°C to 150°C (junction temperature).

What is the on-resistance of the SI4936BDY-T1-E3?

35mOhm at Vgs=10V, Id=5.9A.

Is the SI4936BDY-T1-E3 a dual MOSFET?

Yes, it contains two N-channel MOSFETs in a single package.

What is the gate charge of the SI4936BDY-T1-E3?

15nC at Vgs=10V.

Does the SI4936BDY-T1-E3 have a logic-level gate?

Yes, it features a logic-level gate for low-voltage drive.

SI4936BDY-T1-E3 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SI4936BDY-T1-GE3
SI4936BDY-T1-GE3
Vishay
MOSFET 2N-CH 30V 6.9A 8-SOIC
View Part
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