| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
226,000 pcs
|
226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type |
The Vishay Dale Si4936BDY is a Dual N-Channel MOSFET featuring TrenchFET technology and a 30V drain-source voltage rating. It offers low on-state resistance, with Rds(on) as low as 0.035 Ω at VGS = 10V and 5.9A. The device is packaged in an SO-8 surface mount package.
Key electrical characteristics include a gate-source threshold voltage between 1.5V and 3V, and a continuous drain current of up to 6.9A at 25°C case temperature. The operating junction and storage temperature range is -55°C to 150°C.
This MOSFET is suitable for applications such as low current DC/DC conversion and notebook system power. It is compliant with RoHS and Halogen-free standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V minimum at VGS = 0 V and ID = 250 µA.
The maximum continuous drain current is 6.9 A at TC = 25 °C, 5.5 A at TC = 70 °C, 5.9 A at TA = 25 °C, and 4.7 A at TA = 70 °C.
The maximum drain-source on-state resistance is 0.035 Ω at VGS = 10 V and ID = 5.9 A, and 0.051 Ω at VGS = 4.5 V and ID = 4.9 A.
The operating junction and storage temperature range is -55 °C to 150 °C.
The SI4936BDY is available in a surface-mount SO-8 package.
Yes, the SI4936BDY is halogen-free according to IEC 61249-2-21 definition.
Yes, the SI4936BDY is lead (Pb)-free.