| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,620 pcs
|
5620 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4936ADY-T1-E3 is a dual N-channel MOSFET featuring TrenchFET power technology. It is rated for a drain-source voltage of 30V and a continuous drain current of 4.4A at 25°C. The MOSFET has a low on-resistance of 36mOhm at 5.9A and 10V Vgs, making it suitable for various power switching applications.
This device operates within a temperature range of -55°C to 150°C and is housed in a standard 8-SOIC package. Its logic level gate feature enhances its compatibility with lower voltage control signals. The MOSFET is also compliant with RoHS directives and is halogen-free.
Key electrical characteristics include a gate threshold voltage of 3V maximum at 250µA, a gate charge of 20nC maximum at 10V Vgs, and a maximum power dissipation of 2.0W at 25°C. The device is designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The maximum gate-source voltage is ±20V.
The maximum continuous drain current is 5.9A at 25°C ambient temperature.
It is available in an 8-SOIC surface-mount package.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, it is halogen-free according to the datasheet.
The maximum drain-source on-resistance is 36mOhm at VGS=10V and ID=5.9A.