SI4931DY-T1-GE3 The Vishay Dale SI4931DY-T1-GE3 is a dual P-Channel MOSFET designed for load switching applications. It offers a 12V drain-source voltage and a continuous drain current of 6.7A.
Mfr Part #:

SI4931DY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4931DY-T1-GE3 is a dual P-Channel MOSFET designed for load switching applications. It offers a 12V drain-source voltage and a continuous drain current of 6.7A.
✓ Total Stock: 730 pcs
$ Price Range: $0.99

SI4931DY-T1-GE3 Available from 1 distributor

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SI4931DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id
Voltage

SI4931DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4931DY-T1-GE3 is a dual P-Channel MOSFET featuring a 12V drain-source voltage rating and a continuous drain current of 6.7A at 25°C. It utilizes an advanced high cell density process and TrenchFET technology.

 

This MOSFET has a low on-state resistance, with Rds On measuring 18mOhm at a gate-source voltage of -4.5V and a drain current of -8.9A. The gate charge is typically 34.5nC at VGS = -4.5V, with a maximum of 52nC. The gate threshold voltage is a maximum of 1V at 350µA.

 

Packaged in an 8-SOIC surface-mount configuration, the SI4931DY-T1-GE3 operates within a temperature range of -55°C to 150°C. Its maximum power dissipation is rated at 2W at 25°C ambient temperature. The device is compliant with RoHS and Halogen-free standards.

 

Applications for this MOSFET include load switching. Its dual P-Channel configuration and logic-level gate make it suitable for various power management tasks.

SI4931DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si4931DY Dual P-Channel 12V MOSFET
Subcategory: P-Channel MOSFET

SI4931DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4931DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4931DY-T1-GE3 Features

  • Dual P-Channel 12V MOSFET
  • 6.7A continuous drain current
  • Low Rds On: 18mOhm at 4.5V
  • Logic Level Gate feature
  • 8-SOIC surface mount package

SI4931DY-T1-GE3 Applications

  • Ideal for load switching tasks
  • Suitable for power management circuits
  • Used in battery-powered devices
  • General purpose switching applications

SI4931DY-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI4931DY-T1-GE3?

The drain-source voltage rating is 12V.

What package does the SI4931DY-T1-GE3 come in?

The device is offered in an 8-SOIC surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the continuous drain current at 25°C?

The continuous drain current is 8.9A at 25°C.

What is the typical on-resistance at 4.5V gate drive?

The typical drain-source on-resistance is 18mOhm at VGS=4.5V.

Does this MOSFET support logic-level gate drive?

Yes, the gate threshold voltage ranges from 0.4V to 1V, enabling direct drive from low-voltage logic.

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