| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4931DY-T1-E3 is a dual P-Channel MOSFET designed for load switching applications. It features a 12V drain-source voltage (Vdss) and a continuous drain current of 6.7A at 25°C. The MOSFET exhibits a low on-state resistance (Rds(on)) of 18mΩ at 8.9A and 4.5V gate-source voltage, contributing to efficient power handling.
This device operates within a temperature range of -55°C to 150°C and is available in a compact 8-SOIC surface-mount package. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of up to 1V at 350µA and a maximum gate charge (Qg) of 52nC at 4.5V. The MOSFET is also characterized by its logic level gate capability.
Environmental compliance includes RoHS3 compliance and an MSL 1 rating. The device is designed with advanced high cell density process technology and is halogen-free according to IEC 61249-2-21 definition.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
8-SOIC surface-mount package.
-55°C to 150°C junction temperature.
1V maximum at ID = 350µA.
18mOhm maximum at VGS = 4.5V, ID = 8.9A.
8.9A at 25°C ambient, 7.1A at 70°C ambient.
52nC maximum at VGS = 4.5V.