| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,970 pcs
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2970 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Vishay Siliconix SI4925DY-T1 is a Dual P-Channel MOSFET with a Drain-Source Voltage rating of 30V. This component is housed in a compact SOIC-8 package, suitable for space-constrained designs.
Key electrical specifications include a Gate-Source Voltage range of ±20V and a maximum continuous drain current of 7.1A at 25°C. The device offers a low Drain-Source On-Resistance, with a maximum of 0.032Ω at VGS = -10V. It also features a Gate-Threshold Voltage between 1.0V and 3.0V.
Thermal characteristics include a maximum power dissipation of 2W at 25°C and an operating junction and storage temperature range of -55°C to 150°C. The MOSFET is RoHS3 Compliant, indicating adherence to environmental standards.
This MOSFET is designed for applications requiring efficient switching and power control. Its dual P-channel configuration and SOIC-8 package make it a versatile component for board-level integration.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 30 V.
The SI4925DY-T1 comes in a SOIC-8 package.
The operating junction and storage temperature range is -55 °C to 150 °C.
The RoHS Status is RoHS3 Compliant.
The maximum continuous drain current at 25°C is 7.1 A.
The Gate-Threshold Voltage is between 1.0 V and 3.0 V.
The maximum Drain-Source On-Resistance at VGS = -10V is 0.032 Ω.