| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,970 pcs
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2970 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Vishay Dale SI4925DY is a Dual P-Channel Logic Level MOSFET utilizing advanced PowerTrench technology for minimized on-state resistance and low gate charge. This design ensures superior switching performance, making it well-suited for applications such as load switching, power management, battery charging circuits, and DC/DC conversion in notebook computers.
Key electrical characteristics include a drain-source voltage of -30V and a continuous drain current of -6A. The MOSFET offers a low static drain-source on-resistance, with values as low as 0.032 Ω at VGS = -10V and ID = -6A. Its high performance trench technology contributes to its efficiency.
The device is available in a surface-mount SO-8 package. The operating and storage temperature range is from -55°C to 150°C, with a junction-to-ambient thermal resistance of 78 °C/W and junction-to-case of 40 °C/W.
-30 V
-6 A
0.032 ohm maximum at Vgs = -10 V
-55 to 150 °C
SO-8 surface mount package
-1 V to -3 V
14.5 nC