| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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41,020 pcs
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41020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,774 pcs
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2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,870 pcs
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1870 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4925DDY-T1-GE3 is a high-performance Dual P-Channel MOSFET designed for load switch applications in notebook PCs, desktop PCs, and game stations. It features a 30V drain-source breakdown voltage and a continuous drain current of 8A at 25°C.
This MOSFET offers a low on-state resistance of 29mΩ at 7.3A and 10V Vgs, ensuring efficient power delivery. The gate charge is a maximum of 50nC at 10V Vgs. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 5W at 25°C.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, the SI4925DDY-T1-GE3 is suitable for compact designs. It utilizes TrenchFET technology and is halogen-free, aligning with environmental standards.
Key electrical characteristics include a gate-source voltage of ±20V, a gate-source threshold voltage between 1V and 3V, and an input capacitance of 1350pF at 15V. The device is rated for a maximum power dissipation of 5W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -30V at VGS = 0V, ID = -250 µA.
It is available in an 8-SOIC (Small Outline IC) package for surface mount mounting.
The operating junction and storage temperature range is -55°C to 150°C.
The maximum on-resistance is 29mΩ at VGS = -10V, ID = -7.3A, and 41mΩ at VGS = -4.5V, ID = -6.2A.
The gate-source threshold voltage ranges from 1V to 3V at VDS = VGS, ID = -250 µA.
The maximum input capacitance is 1350pF at VDS = 15V.
The maximum gate charge is 50nC at VGS = 10V.