| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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71 pcs
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71 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI4925D from N-A is a dual P-channel MOSFET array suitable for various switching and power management applications. It offers a drain-source voltage of 30V and a continuous drain current of 6.2A at 25°C. The device exhibits a maximum on-resistance of 21mOhm at 8.3A and 10V gate drive, contributing to efficient operation.
This MOSFET array operates within a junction temperature range of -55°C to 150°C, ensuring robustness in demanding environments. It is housed in a standard 8-SOIC surface-mount package, facilitating integration into compact electronic circuits. The SI4925D is designed for applications such as DC-DC converters, load switches, and power supply designs.
Key electrical characteristics include a maximum gate charge of 70nC at 10V and a gate threshold voltage of 3V at 250µA. The maximum power dissipation is rated at 1.1W. The component is RoHS3 compliant and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage for the SI4925D is 30V.
The continuous drain current for the SI4925D at 25°C is 6.2A.
The maximum on-resistance of the SI4925D is 21 mOhm at 8.3A and 10V gate drive.
The SI4925D operates within a temperature range of -55°C to 150°C.
The SI4925D is supplied in an 8-SOIC package.
The SI4925D is RoHS3 compliant.