SI4925BDY-T1-GE3 The Vishay Dale SI4925BDY-T1-GE3 is a dual P-channel MOSFET array with a 30V drain-source voltage rating. It offers a continuous drain current of 5.3A at 25°C.
Mfr Part #:

SI4925BDY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4925BDY-T1-GE3 is a dual P-channel MOSFET array with a 30V drain-source voltage rating. It offers a continuous drain current of 5.3A at 25°C.
✓ Total Stock: 2,762 pcs
$ Price Range: $0.99

SI4925BDY-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,762 pcs
2762 pcs On Request 1 On Request On Request 18+ On Request On Request

SI4925BDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4925BDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4925BDY-T1-GE3 is a TrenchFET® series power MOSFET array featuring two P-channel devices in a single 8-SOIC package. This surface-mount component is rated for a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.3A at 25°C. It exhibits a low on-resistance (Rds On) of 25mOhm at 7.1A and 10V, with a maximum power dissipation of 1.1W, making it suitable for applications requiring efficient power switching.

 

The device features a logic-level gate, simplifying drive requirements. It is commonly utilized in power management, battery charging, and consumer electronics. The SI4925BDY-T1-GE3 is supplied on a tape and reel for efficient automated assembly.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 3V maximum at 250µA and a total gate charge (Qg) of 50nC maximum at 10V. Dynamic characteristics such as turn-on delay time are typically 91ns, and fall time is typically 34ns.

 

Operating temperature ranges from -55°C to 150°C. The 8-SOIC package is designed for surface mounting. This component is compliant with RoHS3 standards and has an MSL rating of 1.

SI4925BDY-T1-GE3 Quick Information

Product Type: MOSFET Array
Series: TrenchFET®
Canonical Name: Vishay Dale SI4925BDY-T1-GE3 Dual P-Channel 30V MOSFET
Subcategory: Power MOSFET

SI4925BDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4925BDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4925BDY-T1-GE3 Features

  • Dual P-channel 30V MOSFET array
  • Low on-resistance of 25mOhm
  • Logic-level gate drive capability
  • 8-SOIC surface mount package
  • RoHS3 compliant

SI4925BDY-T1-GE3 Applications

  • Suitable for load switches
  • Used in notebook PCs
  • Applicable to desktop PCs
  • Designed for game stations

SI4925BDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the package type?

8-SOIC surface mount.

What is the operating temperature range?

-55°C to +150°C.

What is the maximum continuous drain current at 25°C?

5.3A maximum (typical 7.1A) at TA=25°C.

What is the gate threshold voltage?

Maximum 3V at ID = -250µA.

What is the drain-source on-resistance at 10V gate drive?

Maximum 25mΩ at VGS=-10V, ID=-7.1A.

What is the total gate charge at 10V?

Maximum 50nC at VDS=-15V, VGS=-10V, ID=-7.1A.

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