SI4925BDY-T1-E3 The Vishay Dale SI4925BDY-T1-E3 is a dual P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 5.3A. It is housed in an 8-SOIC package.
Mfr Part #:

SI4925BDY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4925BDY-T1-E3 is a dual P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 5.3A. It is housed in an 8-SOIC package.
✓ Total Stock: 6,128 pcs
$ Price Range: $0.99

SI4925BDY-T1-E3 Available from 3 distributors

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✓ Non-Authorised
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4,743 pcs
4743 pcs On Request 1 On Request On Request 17+ On Request On Request
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699 pcs
699 pcs On Request 1 On Request On Request 0718+ On Request On Request
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686 pcs
686 pcs On Request 1 On Request On Request On Request On Request On Request

SI4925BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI4925BDY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4925BDY-T1-E3 is a dual P-Channel MOSFET designed for load switch applications in notebook PCs, desktop PCs, and game stations. It features TrenchFET Power MOSFET technology and is compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 definition for halogen-free.

 

This MOSFET offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 5.3A at 25°C. The drain-source on-resistance (Rds(on)) is a maximum of 0.025 Ohms at a gate-source voltage (Vgs) of -10V and Id of -7.1A. It also has a logic level gate feature.

 

The device operates over a temperature range of -55°C to 150°C (TJ) and is available in an 8-SOIC package with surface mount technology. The maximum power dissipation is 2.0W at 25°C ambient temperature. Its typical gate charge (Qg) is 50nC at Vgs of 10V.

SI4925BDY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si4925BDY Dual P-Channel 30-V (D-S) MOSFET
Subcategory: P-Channel MOSFET Array

SI4925BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4925BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4925BDY-T1-E3 Features

  • Dual P-Channel 30V MOSFET.
  • Low on-resistance: 0.025 Ohm max.
  • Logic Level Gate technology.
  • 8-SOIC surface mount package.
  • Halogen-free and RoHS compliant.

SI4925BDY-T1-E3 Applications

  • Ideal for load switches.
  • Used in notebook PCs.
  • Suitable for desktop PCs.
  • Applicable to game stations.

SI4925BDY-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4925BDY-T1-E3?

The maximum drain-source voltage is 30V.

What is the continuous drain current of the SI4925BDY-T1-E3?

The continuous drain current is 5.3A.

What is the maximum Rds On for the SI4925BDY-T1-E3 at 10V Vgs?

The maximum Rds On is 0.025 Ohms at 7.1A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4925BDY-T1-E3 available in?

It is available in an 8-SOIC package for surface mounting.

Is the SI4925BDY-T1-E3 halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21 definition.

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