| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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401,778 pcs
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401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Vishay Dale SI4922BDY-T1-GE3 is a dual N-channel MOSFET featuring a 30V drain-source breakdown voltage. It is designed for efficient power management with a continuous drain current rating of 8A and a low on-state resistance as low as 0.016 Ohms at 5A and 10V Vgs.
This MOSFET operates within a wide temperature range of -55°C to 150°C (TJ). It is housed in a standard 8-SOIC package suitable for surface mounting, with dimensions of 0.154" (3.90mm) width. The device is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.
Key electrical characteristics include an input capacitance of 2070pF at 15V and a gate charge of 62nC at 10V Vgs. The gate threshold voltage is a maximum of 1.8V at 250µA. This component is suitable for various power switching and control applications where space and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8A at case temperature 25°C.
0.0135 ohm typical at Vgs=10V, Id=5A.
8-SOIC surface mount package.
Maximum 1.8V at Id=250µA.
-50°C to 150°C (junction and storage).
62 nC maximum at Vgs=10V.