| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4922BDY-T1-E3 is a dual N-channel MOSFET with a drain-source voltage (Vds) rating of 30V. It features a continuous drain current (Id) of up to 8A and a low drain-source on-state resistance (Rds(on)) as low as 0.016 Ohms at 5A and 10V Vgs. This MOSFET is suitable for various power management applications.
This device is available in an 8-SOIC package, designed for surface mounting. The operating temperature range is -55°C to 150°C (TJ). Key electrical characteristics include a gate threshold voltage (Vgs(th)) of up to 1.8V at 250µA and a gate charge (Qg) of 62nC at 10V Vgs. The maximum power dissipation is 3.1W at 25°C case temperature.
It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. The moisture sensitivity level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating (Vds) for the SI4922BDY-T1-E3 is 30V.
The continuous drain current (Id) is 8A at TC = 25°C.
The Rds(on) is a maximum of 0.016 Ohms at 5A and 10V Vgs.
The SI4922BDY-T1-E3 is supplied in an 8-SOIC package.
The operating junction and storage temperature range is -50°C to 150°C.
Yes, the SI4922BDY-T1-E3 is RoHS3 Compliant.
Yes, the SI4922BDY-T1-E3 is halogen-free.